Non-volatile semiconductor memory

ABSTRACT

A non-volatile semiconductor memory device includes a memory cell array having a plurality of non-volatile memory cells, a decode circuit configured to decode address data as input thereto to select a memory cell from the memory cell array, and a data sense circuit configured to detect and amplify the data of the selected memory cell of the memory cell array. The memory cell array includes an initial setup data region with initial setup data and status data being programmed thereinto. The initial setup data is used for determination of memory operating conditions, and the status data indicates whether the initial setup data region is presently normal or not in functionality.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on and claims the benefit of priority under 35USC §119 from the prior Japanese Patent Application No. 2000-304003,filed on Oct. 3, 2000, and under 35 USC §120 from U.S. application Ser.No. 09/968,983, now U.S. Pat. No. 6,970,388 filed Oct. 3, 2001 and U.S.continuation application Ser. No. 10/698,484, filed Nov. 3, 2003, nowU.S. Pat. No. 6,646,930 the entire contents of each of which areincorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to non-volatile semiconductor memory devices.

2. Description of the Related Art

Currently available large-scale semiconductor memory devices aretypically designed to come with built-in redundancy circuitry whichpermits relieving the device including defects, if any. The same goeswith electrically erasable programmable read-only memory (EEPROM) chips.With standard redundancy circuit designs, a redundant row cell array andredundant column cell array are provided in addition to an ordinary orstandard cell array. Also provided is fuse circuitry which storestherein defect addresses and detects whether an externally suppliedaddress coincides with the presently stored defect address forcontrolling address replacement or substitution. The fuse circuitry istypically designed to employ an array of laser-blown type fuses.

The fuse circuit is also used to write or “program” a variety of kindsof initial setup data for determination of the operating conditions of amemory chip, in addition to defect address data for defect repairingpurposes. Examples of such initial setup data include, but not limitedto, data for adjustment of voltages as internally produced on a chip inaccordance with fabrication process parameter irregularities, setup dataof a write voltage(s), and control parameters of the requisite number ofwrite/erase control loops.

Unfortunately, the fuse circuit lacks functional flexibilities due tothe fact that it will hardly permit any re-programming once after havingprogrammed in a certain way. Another disadvantage is that extraction ofdefective portions through a test at the stage of wafer test/inspectionand laser blowout process must be done separately at different processsteps. Additionally these are hardly implementable as a series ofcontinuous steps.

A currently proposed approach to avoiding the problems is to employ asan initial setup data storage circuit in place of the fuse elements anarray of electrically rewritable non-volatile memory cells which are thesame as those used in EEPROMs. Employing such non-volatile memory cellsmakes data writing easier when compared to traditional fuse blowouttechniques, while enabling establishment of rewriting or “reprogramming”of the data.

However, one prior known scheme is for disposing the non-volatile memorycell array for storage of the initial setup data in a specific regionthat is kept separate from a “main” memory cell array. With this scheme,storing initial setup data does require the use of separate or “extra”rewrite/read circuitry in addition to the main memory cell array'sinherent rewrite/read circuitry, which would result in an increase incomplexity of circuit configuration while increasing the resultant chiparea. Another problem faced with the prior art is the difficulty inoperation control procedure due to the necessity of verification andcorrection after once having written the initial setup data.

BRIEF SUMMARY OF THE INVENTION

The non-volatile semiconductor memory device in accordance with oneaspect of the invention includes a memory cell array having a pluralityof non-volatile memory cells, a decode circuit configured to decodeaddress data as input thereto to select a memory cell from the memorycell array, and a data sense circuit configured to detect and amplifythe data of the selected memory cell of the memory cell array. Thememory cell array includes an initial setup data region with initialsetup data being programmed thereinto. The initial setup data is usedfor determination of memory operating conditions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a configuration in block form of an EEPROMin accordance with one embodiment of this invention;

FIG. 2 is a diagram showing equivalent circuitry of a memory cell arrayused in the embodiment shown in FIG. 1;

FIG. 3A depicts a plan view of a NAND cell unit in the memory cell arrayof FIG. 2; and FIG. 3B is an equivalent circuit thereof;

FIGS. 4A and 4B are cross-sectional views of the NAND cell unit as takenalong lines I-I′ and II-II′ of FIG. 3A, respectively;

FIG. 5 is a diagram showing a configuration of a row decoder with latchfunctionality for use in the EEPROM;

FIG. 6 is a diagram depicting a configuration of a data sense circuitused in the EEPROM;

FIG. 7 is a diagram showing latch circuits operatively associated withthe data sense circuit;

FIG. 8 is a pictorial representation of a layout of initial setup datastorage blocks in the cell array of the embodiment, for explanation of ablock layout method also embodying the invention;

FIG. 9 is a pictorial representation for explanation of a data format ofthe initialization (“ini”) data storage blocks;

FIGS. 10A and 10B are diagrams each showing a data storage format of theini data storage blocks;

FIG. 11 is a diagram showing a flow of an initialization operation basedon data of the ini data blocks;

FIG. 12 is a diagram showing a configuration of circuitry which performsa “pass/fail” test to determine whether the initial setup data is normalor defective;

FIG. 13 is a flow diagram of a status data readout operation at the inidata blocks;

FIG. 14 is a flow chart of a column redundancy operation based on dataof the ini data blocks;

FIG. 15 is a flowchart of a defective block flag setting operation usingthe storage block data;

FIG. 16 is a flowchart of a write operation of the ini data storageblocks;

FIG. 17 is a diagram showing a detailed operation flow of the write stepof FIG. 16;

FIG. 18 is a flowchart of another write operation of the initial setupdata storage blocks; and

FIG. 19 is a diagram showing a detailed operation flow of the write stepof FIG. 18.

DETAILED DESCRIPTION OF THE INVENTION

Referring now to FIG. 1, there is shown a configuration of anelectrically erasable and programmable read-only memory (EEPROM) chip ofthe so-called NAND cell type in accordance with one embodiment of thisinvention. As shown herein, this EEPROM chip includes a memory cellarray 1 which is made up of rows and columns of electrically rewritablenon-volatile memory cells as disposed in a matrix form. A respective oneof these memory cells has a stacked-gate metal oxide semiconductor (MOS)transistor structure with a floating gate and a control gate beinginsulatively stacked over each other. The memory cell array 1 alsoincludes, in addition to its normal cell array, a redundant column cellarray 2 for replacement or “substitution” of a defective cell or cells,if any. Also provided in the memory cell array 1 is a specific datastorage region 3, into which initial setup or “prestore” data fordetermination of operating conditions of the memory is written. Thisstorage region 3 will be referred to hereinafter as the initial setupdata region or simply initialization data region, or more simply, “ini”data region.

Turning to FIG. 2, there is depicted an equivalent circuit of the memorycell array 1. In this example, a series connection of sixteen (16)memory cells MC make up a NAND cell unit. A plurality of NAND cell unitswith a word line WL connected in common thereto constitute a cell blockfor use as a minimal unit for data erase. In FIG. 2, cell blocks B0, B1,. . . , Bn are shown, wherein parallel bit lines BL0, BL1, . . . , BLmare provided in common for these cell blocks. One or a plurality of cellblocks of these cell blocks will be used as the initialization or “ini”data region 3 shown in FIG. 1. The cell block configuration of FIG. 2assumes that cell block Bn is designed for use set as the ini dataregion 3.

Conventionally, a memory cell region selected by one word line in thememory cell array 1 is called as 1 (one) page. However, in theillustrative embodiment, the ini data region 3 is divided into“even-numbered page” region and “odd-numbered page” region that aredefined by bit lines. The even-numbered page region is defined as arange that is selectable by even-numbered bit lines (BLE) as included inmultiple parallel bit lines BL associated with the memory cell array 1;the odd-numbered page region is defined as a range selectable byodd-numbered bit lines (BLO). This will be set forth in detail later inthe description.

See FIG. 3A, which shows the layout of a single NAND cell unit. Also seeFIG. 3B which depicts the equivalent circuit thereof. A longitudinalcross-sectional structure of the NAND unit as taken along line I-I′ ofFIG. 3A is shown in FIG. 4A whereas a transverse sectional view of italong line II-II′ of FIG. 3A is illustrated in FIG. 4B. The NAND cellunit includes memory cells MC which are formed within an elementfabrication region of a p-type silicon substrate 20 as partitioned by anelement isolation dielectric film 25. Each memory cell MC has a floatinggate 22 that is formed in the element fabrication region with atunneling dielectric film 21 interposed therebetween, and a control gate24 insulatively overlying the floating gate 22 with an insulator film 23being sandwiched between these gates.

The sixteen memory cells MC within the NAND cell unit are seriallyconnected together in such a manner that adjacent cells commonly sharesource/drain diffusion layers 26. The NAND cell unit has one terminateend which is electrically connected via a select gate transistor S1 to acorresponding one of the bit lines BL and an opposite end which iscoupled via another select gate transistor S2 to a common source lineSL. Control gates 24 of the memory cells MC are continuously disposedand aligned in one direction, forming a word line WL. Each select gatetransistor S1, S2 has insulatively stacked gate electrodes having amultilayer structure similar to that of memory cell MC. A differencebetween the select gate transistor and memory cell transistor is thatthe former lacks the floating gate separation or isolation, which isavailable in the latter. More specifically, the select transistors S1,S2 are such that their multilayer gate electrodes are disposedcontinuously in the same direction as the word lines WL thus providingselect gate lines SGD, SGS. An interlayer dielectric film 27 is formedto cover the cell array, with parallel bit lines (BL) 28 being formedthereon as shown in FIGS. 4A-4B.

One or a plurality of appropriate blocks of the above-discussed cellblocks in the memory cell array 1 thus arranged is/are defined as theini data storage region 3 that stores therein the initial setup data.While ini data region 3 is capable of executing data write, erase andread operations through selection and driving of bit and word lines BLand WL, this region is not accessible externally during ordinaryoperations of the EEPROM. Accordingly, this ini data region 3 will nolonger be set in any erase condition during either the so-called“all-at-a-time” data erasing or selective erase in units of cell blocksalso. Details of this ini data region 3 will be discussed later.

The bit lines BL of the memory cell array 1 are electrically connectedvia a data sense circuit 5 to a data register 6 as shown in FIG. 1. Thedata sense circuit 5 functions to sense and amplify read data while alsoacting as a data latch for latching write data. For selection of a bitline BL and word line WL of the memory cell array 1, a column decoder 7and row decoder 4 are provided. An address AD, data DATA and command CMDare input through an input/output (I/O) buffer 9 as shown in FIG. 1. Theaddress AD is accepted or “imported” at an address register 12; commandCMD is at a command register 12; write data DATA is at a data register6.

Row address data and column address data as output from the addressregister 12 are decoded by the row decoder 4 and the column decoder 7respectively, thereby attaining memory cell selection. A variety ofkinds of high potential level voltages, referred to hereinafter as“high-level” voltages or simply “high” voltages, for use during datawriting and erasing operations are produced by a high-voltage generationcircuit 8 which may be formed of potential rise-up or “booster”circuitry. The command as accepted or accommodated into the commandregister 10 is then decoded by a control circuit 11, which in turnperforms sequential control of data write and erase operations.

During data writing, control is provided in such a way as to first writedata into a presently selected memory cell or cells, then perform a“verify-read” operation for verifying the completeness of resultantdata-written state, and thereafter execute writing again with respect toa write-deficient memory cell(s), if any. Similarly, in data erase eventalso, control is provided in such a way as to first erase data in aselected memory block(s), then perform a verify-read operation forverification of the resulting erase state, and thereafter again performerasing an erase-deficient memory block(s) if any. It is the controlcircuit 11 that performs such a series of write or erase controloperations based on the settings of a write mode or erase mode.

The initial setup data written into the ini data region 3 of memory cellarray 1 may be data items made apparent through execution of wafertest/inspection processes. Typical examples thereof are as follows: (1)defect address data indicative of the address of a defective cell, (2)various control data of data write/erase events, such as voltage data,write/erase control loop number or the like, (3) chip informationincluding but not limited to codes concerning the memory's storagecapacity and/or specifications and a chip manufacturer identification(ID) code. A detailed explanation as to an operation for writing theseinitial setup data items into the ini data region 3 will be presentedlater.

In the EEPROM with the initial setup data having been stored in the inidata region 3 of memory cell array 1 in this way, initialization of itsoperating conditions gets started automatically upon power-on oralternatively in response to receipt of a certain command, and isexecuted through readout of the initial setup data as written in the inidata region 3. This setting of the memory's initial state based on thedata read out of the ini data region 3 is done by an operating conditionsetup circuit, which is made up of a defect address register 13 thatstores a defective cell address or addresses, a voltage setup register15 for storing control data used for control of the high-voltagegenerator circuit 8, and a chip information register 16 for storage ofchip information, as shown in FIG. 1. Reading data from this ini dataregion 3 and controlling transfer of read data toward the respectiveregisters 13, 15 and 16 are automatically carried out by the controlcircuit 11.

More specifically, upon activation of electrical power, a power-on resetcircuit 17 is rendered operative. The control circuit 11 detects thispower-on and then permits establishment of a read mode after elapse of aprespecified length of time period for stabilization of the power supplyvoltage. Subsequently the control circuit 11 causes the address register12 to generate and issue an internal address used to scan the ini dataregion 3, which address will be sequentially incremented. And, the dataof ini data region 3 as selected by the row decoder 4 and column decoder7 will be read by the data sense circuit 5 and then transferred via databuses BUS to the respective registers 13, 15 and 16 for initializationand next stored therein.

The initialization operation stated above may be modified so that therequired control is done in response to an appropriate command as inputthereto, rather than depending on the powerup detection.

Turning now to FIG. 5, there is shown a configuration of main part ofthe row decoder 4 for wordline selection and drive, which includes ablock address selection circuit 41 and its associative wordline drivecircuit 43 to be controlled in response to an output signal of the blockaddress selector circuit 41. This block address selector 41 has a NANDgate G2 to which a block address is input. For a presently selected cellblock, an output of the NAND gate G2 potentially goes low, i.e. itspotential drops down at a low or “L” level. In responding thereto, ablock select signal RDEC of high or “H” level will be output fromselector 41.

The block address selector 41 includes a data latch circuit 42 thatforces a defective cell block to be held in inactive state. This datalatch 42 also has the function of the operating condition setter circuitfor initialization of the operating conditions of the memory. Moreprecisely, more than one defect address is to be stored in the ini dataregion 3 based on test/inspection results in a way as will be set forthin detail later. At the stage for initialization of the EEPROM chip,this is read out of it, causing flag data indicating that this isdefective with respect to a defective cell block to be written into thedata latch circuit 42.

A detailed explanation is as follows. Upon reading of the address of adefective cell block from the ini data storage region 3, the NAND gateG2 of a corresponding cell block issues an output of “L” level, thuscausing an N-channel MOS (NMOS) transistor QN4 to turn on. Substantiallysimultaneously, an NMOS transistor QN6 turns on in response to receiptof a control signal FSETR, thereby permitting “L” to be held at a nodeN1 of the latch circuit 42. This state will be retained while the powersupply is set to ON, whereby a NAND gate G3 is made inactive. In brief,even when a defective cell block address is input in the followingmemory operations, the select signal RDEC is potentially kept at “L”level. With regard to defect-free or “normal” cell blocks, the node N1of latch circuit 42 is set at “H” level; thus, the NAND gate G3 is keptactive. Whereby, upon inputting of a block address, control is providedletting the select signal RDEC potentially go high to reach “H” level.

In the case of the illustrative embodiment, column redundancy isexecuted in a way as will be described later; however, row redundancy isunavailable while merely causing the flag indicative of a defective cellblock to be stored in the block address selector 41 within the rowdecoder. Consequently, during the practically implemented memoryoperation control procedure, a central processor unit (CPU), forexample, is expected to automatically perform scan readout of all thememory cell arrays for detection of a defective cell block address(es)if any. This is followed by a write/read control operation to ensurethat such defective cell block(s) is/are out of use. An alternativeapproach is to externally output the flag indicative of a defective cellblock being presently held at the block address selector 41.

In FIG. 5, upon selection of a normal cell block, the select signal RDECpotentially goes high to have “H” level, which is then sent forth to anode N0 via depression (D) type NMOS transistors QNd1 and QNd2. A groupof NMOS transistors QN7 as driven by this node N0 are for use as drivetransistors that electrically drive select gate lines SGD, SGS and wordlines WL0-WL15. Drive signal lines SGDN, CGN0-CGN15, SGSN are connectedvia these drive transistors QN7 to the select gate line SGD, word linesWL0-15 and select gate line SGS, respectively.

More specifically, if in the case of data writing, a high write voltagepotential is applied to one selected by a row main decoder from amongthe drive signal lines CGN0-CGN15, while letting an intermediate or“midway” potential for write inhibition be given to more than one drivesignal line closer to the bitline side than the selected line. In thecase of data reading, a read voltage is given to one selected by the rowmain decoder from among drive signal lines CGN0-CGN15 whilesimultaneously applying a “pass” voltage to the remaining drive signallines.

In case any cell block is not selected or, alternatively, it is adefective cell block, the select gate lines SGD, SGS and word linesWL0-15 are coupled to ground by a reset circuit 44. A signal DECB thatis an output of the block address selector circuit 41 as has beeninverted by an inverter INV4 is at “H” level in both non-selected or“unselect” cell blocks and a defective cell block(s), thereby renderingthe reset circuit 44 operative.

An ensemble of NMOS transistors QN1-QN3, capacitors C1-C2, inverter INV1and NAND gate G1 makes up a switch circuit 40 which is operable totransfer a voltage VRDEC to the node N0. One of power supply voltage VCCand a high voltage as output from a high voltage generator circuit 8 isselected and given to a VRDEC terminal. Upon selection of a cell block,the select signal RDEC of “H” level is transferred to the node N0,causing the NMOS transistor QN1 to turn on; thus, the voltage VRDEC issent to node N0 through this NMOS transistor QN1 and diode-connectedNMOS transistor QN2. An alternate current (AC) signal OSCRD is presentlyapplied to the NAND gate G1. Accordingly, whenever NAND gate G1 is madeactive by RDEC=“H,” the capacitors C1-C2 are driven by the AC signalpassed through NAND gate G1 in such a way that these capacitors areopposite in phase to each other. Whereby, the switch circuit 40 performsa voltage transfer operation due to charge-pumping.

As a result of this charge-pumping effect, a voltage slightly higher inpotential than the voltage VRDEC, represented by “VRDEC+α” is given tothe node N0. NMOS transistor QN3 is provided for prevention of anyexcessive increase in potential at node N0. In brief, the potential atnode N0 is suppressed to be less than or equal to VRDEC+Vth, where “Vth”is the threshold voltage of NMOS transistor QN3.

When the voltage VRDEC is transferred by the switch circuit 40 to thenode N0, set a signal BSTON at zero (0) volts while causing the D-typeNMOS transistor QNd1 to turn off. Whereby, the voltage VRDEC being givento node N0 is no longer sent to the output terminal side of blockaddress selector circuit 41.

See FIG. 6, which shows one exemplary configuration of the data sensecircuit 5 of FIG. 1. Data sense circuit 5 is generally made up of aplurality of sense amplifiers S/A, each of which is provided at arespective one of the bit lines BL. Each sense amplifier S/A includes adata latch circuits 50 that is configured from two antiparallel-coupledclocked inverters INV11, INV12. This data latch circuit 5.0 and othersimilar data latch circuits of the remaining sense amps S/A (not shownin FIG. 6) constitute a page buffer (PB). A bit line BL associated withthe sense amp S/A of FIG. 6 is connected via a clamping transistor QN12to a node N3. This node N3 is coupled via an NMOS transistor QN13 to anode N11 of latch circuit 50.

There are provided at the node N3 a bitline-precharging NMOS transistorQN11 and a capacitor C3 for holding a voltage potential of node N3.Capacitor C3 is used to control the potential of node N3 by capacitivecoupling when the need arises.

In a data write event, based on the data as held at the latch circuit50, either “H” or “L” level of the node N11 is given to the bit line viatransistors QN13 and QN12, thereby causing an NAND cell channel to beprecharged in accordance with the data. During verify-reading of writedata, a sensing NMOS transistor QN15 is used which is provided at a nodeN12 of latch 50. At this time a bitline potential as read to node N3 isgiven via NMOS transistor QN14 to the gate of NMOS transistor QN15. Tobe brief, NMOS transistor QN15 is controlled to turn on and off inresponse to the potential at node N3, thus determining whether the databeing held at latch circuit 50 is inverted or is kept unchanged.

The nodes N11, N12 of sense amplifier S/A are connected to correspondingdata lines through a column gate 72 that makes up the column decoder 7.Column gate 72 is controlled by an output of a decode gate 71, to whichmore than one column address is input.

A basic operation of the sense amplifier S/A thus arranged in the waystated above is as follows. Practically a data write operation isperformed by repeated execution of a write pulse applying operation anda verify-read operation in order to force the data of interest tofinally fall within a prespecified threshold voltage range. In this casethe write data being presently held at the latch circuit 50 iscontrolled based on a later-obtainable verify-read data in a way suchthat upon completion of writing, the data is inverted in logic levelwhile inhibiting or “disabling” any later-executed writing operations.

With the illustrative NAND-cell EEPROM embodying the invention, if inthe case of storage of digital binary data, then store the highthreshold voltage state of a memory cell (for example, positivethreshold voltage state) as a logical “0” data bit; store a lowthreshold voltage state (e.g. negative threshold state) of the cell aslogical “1” data. In this case, “L” is loaded to the sense amp S/A'snode N11 if write data is a “0”; if write data is “1” then “H” is loadedthereto.

Then, in accordance with the data at node N11, either a source voltageVSS (when “0” is written) or power supply voltage VCC (when “1” iswritten) is given to the bit line via transistors QN13, QN12, thusprecharging the NAND cell channel. Thereafter, a high voltage for datawriting, i.e. high write voltage, is applied to a selected word linewhile at the same time applying an intermediate voltage to the remainingnon-select or “unselect” word lines, thereby causing electrons to beinjected by tunneling or “tunnel-injected” into the floating gate of a“0”-write memory cell, which results in its threshold voltage beingpositively offset. This is the “0” data programmed state. At memorycells with “1” written thereinto, such electron injection will hardlyoccur, resulting in the threshold voltage being kept unchanged.

After the writing operation, a verify-read operation is to be done. Thisverify-reading is the same in principle as ordinary read operations.Apply to a selected word line a voltage corresponding to a certainto-be-sensed threshold voltage while giving a pass voltage to theremaining unselect memory cells; then, detect the presence or absence ofdischarging at a bit line due to conduction or non-conduction of aselected memory cell. At this time the bitline's potential change issent to the node N3 through the clamping transistor QN12. When this isdone, the NMOS transistor QN13 is kept in the OFF state thereof.

In case the “0” write is done sufficiently, bitline discharging will nolonger occur causing the node N3 to potentially go high at “H” level. Atthis time, when turning NMOS transistor QN14 on in response to receiptof a verify signal VER, NMOS transistor QN15 turns on due to “H” at nodeN3, causing “L” to be given to node N12. Thus the clocked invertersINV11, INV12 of latch circuit 50 which have been held in the inactivestate until then are made active sequentially, whereby data with nodeN11=“H” will be taken thereinto. In short, upon completion of “0”writing, the data as held at latch 50 is inverted.

In the case of “1” write and in the case “0” write is deficient,execution of verify-reading results in the node N3 being set at “L”.Hence, the data of latch 50 is not inverted causing any memory cellsinto which “0” is to be further written to retain “L” while letting“1”-written cells hold “H”. Whereby, a write pulse application operationwill be further repeated with respect to only a write-deficient bit orbits.

An NMOS transistor QN16 having its gate connected to the node N11 oflatch circuit 50 is for use as a verify-check transistor. Thistransistor QN16 is provided at the individual one of all the senseamplifiers S/A making up one page. In the event that node N11potentially goes high and reaches “H” level after verify-read is done,this transistor QN16 turns on. Thus it becomes possible by detecting thestate change of this transistor QN16 at all the sense amps S/A tosuccessfully determine whether all the written data bits correspondingto one page are proper or not at a time.

In this embodiment, a defective cell address if any is read at the stageof initialization of the EEPROM; at this time, control is done to makethe sense amplifier S/A of a defective column inactive. To this end, asshown in FIG. 7, several data latch circuits 52 are provided forselectively making the sense amps S/A inactive. More specifically, underan assumption that parallel data bits are concurrently subject toread/write on a per-byte basis in response to one column address, thedata latch circuits 52 are provided so that these are organized intogroups or “clusters” each consisting of eight sense amps S/A0-7,S/A8-15, S/A16-23, . . . , wherein each sense-amp cluster corresponds toa single column. Each data latch 52 is configured from an antiparallelconnection of two clocked inverters. Data latch 52 has a node 21 at oneend thereof, which is connected to an activation terminal of itscorresponding one of the sense-amp clusters S/A0-7, S/A8-15, et seq.This node N21 is also coupled to a signal line FIO via an NMOStransistor QN21, which is expected to receive a defective column addressFCSLi, where “i” is 0, 1, 2, . . . . Data latch 52 also has itsremaining node N22, at which a reset NMOS transistor QN22 is provided.

Assume that a column address “0” is defective. If this is the case,FCSL0=“H” is established during a chip initialization operation, causing“L” to be taken into the node N21 of latch circuit 52. This permitssense amplifiers S/A0-7 to stay in inactive state during power-on. As aconsequence, this data latch 52 also makes up the above-noted operatingcondition setter circuitry for initializing “during-the-operation”requirements of the memory.

A detailed explanation will next be given of a configuration of theinitialization (“ini”) data storage region 3 as predefined within thememory cell array 1 of the EEPROM embodying the invention, along withits operation for initialization of such EEPROM.

As shown in FIG. 8, assume that the memory cell array 1 is subdividedinto two portions, called “planes” PLANE1, PLANE2. Note here that theseplanes PLANE1, PLANE2 have mutually “independent” word lines which areselectable by executive row decoders 4 respectively, and also have datasense circuits 5 that are operable in a way independently of each other.

In the case of this embodiment shown herein, the ini data storage region3 within the memory cell array 1 is designed to employ two, first andsecond data storage blocks 3A and 3B. The first ini data block 3Aincludes sub-blocks BLK1A, BLK2A in the planes PLANE1, PLANE2respectively; the second ini data block 3B has its own sub-blocks BLK1B,BLK2B. Note here that these sub-blocks BLK1A, BLK2A, BLK1B, BLK2B eachdefine the range of one block of memory cells for use as a unit of dataerase within each plane PLANE1, PLANE2.

Each ini data block 3A, 3B is designed to extend along or “bridge”between the two planes PLANE1, PLANE2 for purposes of establishment of asufficient storage capacity required for the ini data region 3. Such twoini data blocks 3A, 3B may be formed within a single plane, for example.Alternatively, even where the memory cell array is not divided intomultiple planes, the principles of this invention is effective; in suchcase, two ini data blocks are formable within a single memory cell arraythereof.

The same data will be programmed into the first ini data block 3A andthe second ini data block 3B. Firstly, based on test results, statusdata indicative of whether these ini data blocks 3A, 3B are normal isstored in both of them. Further written as the initial setup data intothese data blocks 3A, 3B other than this status data are optional dataitems which include defect address data and voltage setup data andothers.

Although in practice only either one of these ini data blocks 3A, 3B isused, the two identical blocks are prepared with one as a duplicate keptin reserve in view of risks of defects. Specifically, if the first inidata block 3A is normal, then this will be used while letting the secondini data block 3B be out of use. Alternatively, if first data block 3Ais found defective, then the data presently held at second block 3B willbe used. In case first and second blocks 3A, 3B are both defective, thememory chip is rejected as a defective product. In this way, the use oftwo data blocks 3A, 3B with the same data written thereinto as the inidata region 3 makes it possible to attain enhanced repairability or“curability” even in the presence of any partial defects within ini dataregion 3.

Turning to FIG. 9, there is shown the format of data to be written intothe first and second ini data blocks 3A, 3B. The initial setup data issuch that a binary data bit (1-bit data) “0” or “1” is settled dependingupon writing of all “0”s or all “1”s into sixteen memory cells of asingle NAND cell unit as selected by word lines WL0-WL15. This is forincreasing the reliability of such initial setup data. Reading data outof one of those memory cells making up the NAND cell unit is achievableby rendering the remaining memory cells conductive to thereby force themto act as data transfer or “pass-through” transistors. Due to this, theNAND cell unit is different in channel resistivity in accordance withthe actually established data state, while staying less in margin of “0”or “1” data read signal. In contrast thereto, if an arrangement isemployed for permitting storage of 1-bit data “0” or “1” depending uponwhether the NAND cell unit is set in the all “0” state or in all “1”state, the resultant signal margin of “0” or “1” data increases,resulting in a likewise increase in reliability of the initial setupdata.

Also note that the initial setup data is such that effective or “net”data is written into seven (7) bits of certain data terminals I/O0-6 asselected from 1-byte parallel data corresponding to eight (8) dataterminals I/O0-7 while letting the remaining one (1) bit be used as aflag bit indicative of whether this data is valid or not. In the eventthat the flag bit is a logic “0”, this data will be deemed valid; if “1”then this data is made invalid. The former case occurs when itscorresponding NAND cell unit is in the all “0” state, which isequivalent to the write state with positive threshold voltage. Thelatter case takes place when the corresponding NAND cell unit is in theall “1” state, equivalent to the write state with negative thresholdvoltage.

In case the chip per se performs a test automatically, the flag bit “0”is written as a result of such auto-test. Alternatively in case the testis done by use of a tester, data will be externally loaded in accordancewith the test results, followed by execution of writing. If the flag bitis “1”, then such data will no longer be reflected on any operations tobe later executed. If the flag bit is “0”, then the data will bereflected on the later-executed operations.

Further precisely, as shown in FIGS. 10A and 10B, the ini data blocks3A, 3B are arranged so that each is divided into pages: even-numberedpages which consist of the range of even-numbered bit lines (BLE), andodd-numbered pages consisting of the range of odd-numbered bit lines(BLO). And, let the status data indicative of whether the block 3A, 3Bis normal or defective be stored in the even-numbered pages.Additionally a defect column address of defect addresses is stored inthe even-numbered pages whereas a defect row address and other optionaldata items are stored together in the odd-numbered pages.

All the data items written into the even- and odd-numbered pages are tobe held as a combination or “set” of complementary data segments “a” and“a(Bar)” which will be represented by “/a” for clarity purposes in therest of the description. Note here that data segments a, /a are each of1 byte (with 7-bit net data included therein), as discussed previouslyin conjunction with FIG. 9. More specifically, for a=“1, 1, 1, 1, 0, 0,0”, let /a=“0, 0, 0, 0, 1, 1, 1”. Satisfying this relationship of thecomplementary data a, /a, the judgment “block is normal” is done if inthe case of the status data; if in the initial setup data, it will beutilizable as “valid data.” Using as a set the data segments-exhibitingsuch complementary relationship makes it possible to facilitate theintended good/bad or “pass/fail” check procedure of the initial setupdata of interest when sending the initial setup data toward theoperating condition setter circuit stated supra.

In FIG. 10A, there is exemplarily shown only one defective columnaddress data as included in several data items being stored ineven-numbered pages. As shown herein, while one set of data satisfiesthe complementary relationship of “a, /a”, four sets of identical dataare written into different column address positions respectively. On theother hand, regarding defective row address data (actually, defectivecell block address data) to be stored in odd-numbered pages, two sets ofidentical defective cell block address data each consisting of thecomplementary data items of a, /a are written at different columnaddress positions. This is as a result of taking into consideration thefact that initial setup data will be first read out of an even-numberedpages for execution of the initialization required.

More specifically, at the stage of reading the even-page initial setupdata, the defective column address data has already been stored therein;however, defective column replacement or substitution has not yet beenperformed, which suggests that it may contain a defective column withincreased possibility. Due to this, four sets of defective columnaddress data are prepared in advance. In contrast, at the stage ofodd-page reading, defective column substitution is done based on thedefective column address data as has already been read; thus, a lessnumber of sets of defective block address data may be required.Nevertheless, two defective block address data sets are prepared in thisembodiment because the presence of any possible risks is taken intoconsideration as to degradation of the memory cell characteristicsoccurrable after product shipment to markets.

More generically, N (where “N” is a positive integer) sets of statusdata and N sets of defective column address data—each set satisfies thecomplementary relationship—are programmed into even-numbered pages;similarly, M (where “M” is a positive integer less than “N”) sets ofdefective row address data, each of which satisfies the complementaryrelation, are programmed into odd-numbered pages. With such an ini dataregion arrangement, it becomes possible, in an initializing operationwith the “even-page first read” feature, to equivalently guarantee theavailability of both the even-page data that can contain a defect(s)with higher possibility and the data upon reading of odd pages withdefect replacement control being provided as a result of such even-pagedata reading.

Referring next to FIG. 11, there is shown an operation flow ofinitialization procedure using the initial setup data as read out of theini data storage region 3. This operation gets started automaticallyupon detection of power-on by the chip or, alternatively, when loading acommand “FF” for initialization. In case this “FF” command is alsoutilized for ordinary memory operations (write, read and erase), thecontrol circuit 11 may be programmed to judge the “FF” command whichfirst incomes immediately after powerup as a read command forinitialization.

Upon startup of the initialization operation, the procedure of FIG. 11goes to step S101, which resets those registers used for initialization:the defect address register 13, voltage setup register 15, and chipinformation register 16 shown in FIG. 1. Then, at step S102, select thefirst data block 3A of the ini data region 3; next at step S103, readdata out of even-numbered pages in block 3A into the data sense circuit5.

The procedure goes next to step S104 which uses the status dataextracted from the even-page data to determine or “judge” whether thedata block of interest is normal in functionality. This judgment is madeby utilizing the fact that the respective data items are stored as thecomplementary data set of “a”, “/a” as previously discussed inconjunction with FIGS. 10A-B and then determining if such complementaryrelationship is satisfied.

More specifically, as shown in FIG. 12, transfer data “a” toward a firstregister REG1 while sending data /a to a second register REG2; then, letthe data of these registers REG1, 2 be input to an exclusive-OR gateEX-OR. If the data successfully satisfies the complementary relation ofa and /a, then a binary bit “1” is obtainable from the Ex-OR gate toindicate that the block of interest is normal; if fail then a “0” isoutput indicating that the block is defective. That is, an output ofthis Ex-OR gate is adaptable for use as the status data output required.

The “valid/invalid” check of the remaining initial setup data itemsother than the status data, such as defect address data or the like,will also be done using a similar logic. And, as shown in FIG. 12, whenthe Ex-OR gate's output is a logic “1,” a transfer gate TG as controlledthereby is used to transfer as valid data the output of register REG1 torespective corresponding initialization registers.

The valid/invalid check operation executed by the circuitry of FIG. 12is actually done within the control circuit 11 shown in FIG. 1. Aspreviously stated, the even-numbered pages are each provided with foursets of identical data on the assumption that defects can occur therein.Accordingly, sufficiency is felt whenever only one of these four datasets is affirmed to satisfy the above-noted complementary relationship.Note that during testing, the above procedure is modifiable to issue thejudgment of “normal” in the event that more than two sets of the fourstatus data sets are affirmed to satisfy the complementary relationship,by way of example.

At step S104 of FIG. 11, if the first ini data block 3A is determined tobe defective, then the procedure goes to step S105 which selects thesecond ini data block 3B. Then at step S106, read even-page data in away similar to that at the previous step S103. Next at step S107, usethe read data to determine whether the data block of interest is normalor not. If second block 3B is also judged defective then determine thechip per se is defective. In this case the system procedure isterminated without performing any initialization operation.

If at step S104, the first ini data block 3A is found normal, then theprocedure goes to step S108 which performs based on the data theinitialization for defective column replacement. Alternatively, if firstdata block 3A is found defective at step S104 whereas second block 3B isverified to be normal at step S107, then use defective column addressdata as read out of the even page of this second block 3B to execute theinitialization for defective column replacement at step S108. Morespecifically, let the defective column address data be sent to thedefect address register 13 of FIG. 1. Whereby, in the memory'sread/write operations to be done thereafter, an attempt is made todetect coincidence between an externally supplied address and thedefective column address. If such coincidence is detected then controlis provided to replace a defective column select line with a sparecolumn select line at the column decoder 7.

It should be noted that at this step S108 also, judgment is made as tothe validity of the defective column data thus read using similar logicto that as has been explained in conjunction with FIG. 12, causing validdata to be sent toward the register concerned. Accordingly, if all ofthe four defective column address data sets fail to satisfy theabove-noted complementary relationship, then the procedure is endedwithout performing any initialization operation while determining thatthe chip is defective.

After having successfully completed the initialization for defectivecolumn replacement at step. S108 of FIG. 11, the procedure goes next tostep S109 which reads odd-page data of the ini data block that wasjudged normal. Then at step S110, use the valid defective cell blockaddress data to set a flag indicative of defectiveness with respect to adefective cell block. More precisely, flag data will be written into adata latch circuit 42 as provided in the row decoder 4 corresponding tosuch defective cell block for causing this cell block to be keptinactive at all times.

The defective cell block address may be transferred to the defectaddress register 13 simultaneously. Note here that the illustrativeembodiment offers no defective-row substitution controllabilities.

At step S111, let option data such as voltage setup data and others bealso sent to the peripheral setup registers 15, 16. At these steps also,the data validity check is done based on the above-stated complementaryrelationship. If every two-set data fails to satisfy the complementaryrelation then the procedure is ended without performing anyinitialization operation, while determining the chip per se to be adefective product.

After completion of the valid data transfer to each initial setupregister, the procedure proceeds to step S112 which performs separationor isolation of a sense amplifier associated with the defective column,by making it inactive. More specifically, as shown in FIG. 7, write datainto certain one of the data latch circuits 52 provided in units of8-bit sense amp clusters, thereby causing a specific sense-amp clusterof the defective column to be kept inactive. After having completed theabove processing, the initialization operation is terminated.

FIG. 13 shows a detailed flow of the block state check steps S104, S107in FIG. 11. Principally the check logic stated in conjunction with FIG.12 is utilized. The routine of FIG. 13 starts with step S201 whichinitializes the normal data number “k”; then, initialize the columnaddress at step S202, followed by step S203 which selects the top column(i=0) to thereby read the data “a” of the ini data block. Then, go tostep S204 which identifies the data as read into a data sense circuit(page buffer PB) and transfers it to the first register REG1 of FIG. 12.

Similarly, at step S205, select the next column (i=1) to read data “/a”;then, at step S206, send such read data to the second register REG2. Andat step S207, perform an exclusive OR between the data of first registerREG1 and that of second register REG2, thereby checking whether the datais good or not. If the check data is a logical “0” (defective), then theroutine jumps to step S210 which verifies whether the column addressfalls within a range of “i<6”. If YES, then go to step S211 whichupdates the column address to “i+2” and thereafter return to step S203.Alternatively, if the check data is a “1” (normal), then go to step S208which determines whether the data number “k” is less than a predefinedvalue “x.” If YES then go to step S269 which updates the value k to“k+1”; then proceed to step S210 for repeated execution of the columnaddress updating processing stated above. Thereafter, a similaroperation will be repeated.

If NO at step S208, that is, when the normal data number “k” isascertained to be greater than or equal to the predefined value “x”,then set the block state to “Pass” (normal), followed by termination ofthis system routine. Even after repeated execution of the check processwhile updating the column address, the normal data number can stay lessthan the value x. If this is the case, set the block state to “Fail”(defective); then, exit the routine.

Note here that the value x is set to x=0 upon ordinary power-on oralternatively during the “FF” command-based initializing operation. Morespecifically, in case at least one normal data is found untilestablishment of a column address i=6 for selection of four data sets,the routine ends with the determination of chip normality. If all thefour data sets are defective then determine that the chip is defective.

On the other hand, during testing, input a status data read command andthen set x=1. At this time, make sure that the four “a, /a” data setsinclude two normal sets; then, the setting of “Pass” is to be done. Withsuch an arrangement, it is possible to guarantee the normality of suchtwo data sets upon shipment of the memory chip as a product to themarket. And, even where one data set will become defective after theproduct shipment, the chip is guaranteed to be handleable as a normalproduct.

Turning to FIG. 14, there is depicted a practically implementableoperation flow of the column replace/setting step S108 shown in FIG. 11.This flowchart assumes that defects of eight (8) columns per plane ofthe memory cell array 1 and thus sixteen (16) columns for two planes arereplaceable. The routine shown herein starts with step S301, whichinitializes a number “j” that is two times greater than the number ofdefective column addresses (because two bytes are required to representa single defective column address). The routine goes next to step S302which initializes the normal data number “k”; then, at step S303,initialize the column address. Then, at step S304, select a top column(i=0) and then read defective column address data “a” of ini data block.Next at step S305, transfer the data read into a data sense circuit(page buffer PB) toward the first register REG1.

Similarly at step S306, select the next column (i=1) to read defectivecolumn address data “/a”; then, at step S307, transfer such data to thesecond register. REG2. Then at step S308, perform an exclusive ORbetween the data of first register REG1 and that of second register REG2to thereby perform data “good/bad.” check. If the resultant check datais a “0” (defective), then the routine jumps to step S311 whichdetermines whether the column address is within a range of “i<6”. If YESthen update the column address to “i+2” at step S312 and thereafterreturn to step S304. If the check data is a “1” (normal) at step S308then go to step S309 which determines if the data number “k” is lessthan a preset value “x”. If YES then go to step S310 which updates thevalue k to “k+1”. Thereafter, similar column address updating will beperformed, followed by repeated execution of a similar operation.

And at step S309, judgment is made to verify that the normal data number“k” is not less than the preset value “x”. Even after repeated executionof the check process while updating the column address, the normal datanumber can stay less than the value x. If this is the case, set it to“Fail” (defective); then, exit the routine. If it is affirmed that thenormal data number k is not less than value x then go to step S313 whichtransfers the presently available defective column address data fromfirst register REG1 to the defect address register 13 shown in FIG. 1.

Then at step S314, verify that a defective column replace number is lessthan 16 (i.e. j<31). If YES then go to step S315 which updates thedefective column number j, followed by repeated execution of a similaroperation. If NO then go to step S316 which performs processing formaking the defective column's sense amplifier inactive, followed bytermination of the initialization operation for defective columnreplacement.

In ordinary power-on events or, alternatively, during reading inresponse to the “FF” command, let the value x be x=0. More specifically,whenever at least one defective column address data set is present,judgment of “valid” is made causing defective column replacinginitialization to be done based on the data of first register REG1 (thismay alternatively be second register REG2).

On the other hand, upon inputting of a column defect replace commandduring testing, let the value x be x=1 and then permit execution of theoperation control of FIG. 14. In this case, make sure that the four “a,/a” data sets include two or more normal sets; then, perform theinitialization for column replacement. With such an arrangement, it ispossible to affirm the normal state of such more than two defectivecolumn address data sets in response to the column defect replacecommand, which in turn makes it possible to guarantee the normality oftwo data sets upon shipment of the memory chip product. And, even whereone data set becomes defective after the product shipment, it will beguaranteed that the chip is successfully initializable through readingof defective column address data.

In the above-discussed defective column replacing initializationoperation, the defective column address data may alternatively be sentto the defect address register 13 of peripheral circuitry under anassumption that the defective column address data is valid withoutregard to the flag bit. The reason of this is as follows. Defectivecolumn replacement is actually done based on the data of defectivecolumn address register 13; thus, when detecting coincidence between adefective address stored in this defective column register 13 and anexternally supplied address, it is permissible that any invalid datawith its flag bit of “1” is ignored while handling it as valid data onlywhen the flag bit is “0”. Note that each data may be transferred onlywhen its flag bit is “0” (valid) as in the case of defective block flagsetup and/or option settings as will next be discussed below.

Referring to FIG. 15, there is shown an operation flow of the defectivecell block flag setup step S110 in FIG. 11. An operation flow of theoption setup step S111 is similar thereto in principle. First, at stepS401, initialize the defective block number “j”. Then at step S402,initialize column address “i”. Next at step S403, select the top column(i=0) to read defective row address data “a” of ini data block. And atstep. S404, transfer the data read into a data sense circuit (pagebuffer PB) toward the first register REG1.

Similarly, select the next column (i=1) and read defective row addressdata “/a” at step S405; then, at step S406, send the data to secondregister REG2. And at step S407, perform an exclusive OR between thedata of first register REG1 and that of second register REG2 to therebydetermine whether the data is good or bad—say, “pass/fail” check. If thecheck result is a “0” (defective) then make sure that the column addressfalls within a range of “i<3” at step S409; then, at step S410, updatethe column address to “i+2” for selection of the next data set. Asimilar operation will be repeated thereafter. In view of the fact thatthe defective row address data is provided in the form of two sets asstated previously, if both of them are judged to suffer from datadefects at step S409, the processing ends with a decision of chip defect“Fail.”

If the check result at step S407 is “1” (normal), then go to step S408which detects the flag bit of each defective block address data. If theflag bit is “0” (normal) then transfer such flag bit data to the datalatch circuit 42 as provided in block selector circuit 41 of the rowdecoder shown in FIG. 5. This data transfer is achievable by use of aspecial-purpose command. Whereby, the defective cell block's flag setupis completed; thereafter, this defective cell block will be keptinactive. The defective row address data may also be concurrently sentto and stored in the defective address register 13.

And at step S412, ascertain that the defective block number “j” staysless than a preset value “x”; then, at step S413, update the value “j”.Thereafter a similar operation will be repeated. If the defective blocknumber j is not less than value x, then terminate the defective blockflag setting operation with “Pass” established thereto. Morespecifically, in case the block address is represented by two bytes, thevalue “x+1” will be set at a specific value that is two times greaterthan an allowable defective block number.

While the setting of the remaining option data will also be done in asimilar flow as stated previously, these defective block flag settingand option data setup operations may automatically be performedsequentially in response to input of a certain command; alternatively,these may be designed to operate in response to input of independentcommands, respectively.

An explanation will next be given of an operation of writing initialsetup data into the ini data blocks 3A, 3B. This initial setup datawriting will be different in procedure between when the memory chipperforms an automated test and when the chip does not perform suchauto-test.

FIG. 16 is a flow diagram in the case of writing into the ini datablocks 3A, 3B through testing using a memory tester, without performingany auto-test. The illustrative write routine starts with step S501which inputs an erase command by the memory tester to the EEPROM andthen erases the entirety of first ini data block 3A at a time: this iscalled the “all-at-a-time” or “all-at-once” erase. Then at step S502,apply the all-at-once erase to second block 3B.

Thereafter, at step S503, determine based on status data whether thefirst ini data block 3A is normal. If normal, then go to step S504 whichwrites into first block 3A respective initial setup data items typicallyincluding a defect address(es). At step S505, perform verify-reading ofthe written data. If successful write completion is affirmed then theroutine ends with “Pass” being set to the chip state. If the writeoperation is in fail then the routine ends with “Fail”; alternatively,the routine may jump to the step of writing second ini data block 3B.

If at step S503 the first ini data block 3A is found defective, then theroutine proceeds to step S506 which determines whether the second inidata block 3B is normal or not. If NO at step S506 then exit the routinewhile determining this chip is defective. If YES at step S506 then go tostep S507 which writes into second block 3B respective initial setupdata items including a defect address(es). And at step S508, let thewritten data be subject to verify-reading. If write completion isaffirmed then the routine ends with “Pass” being set to the chip state.If the write is failed then the routine ends with “Fail.”

It must be noted that the verify-read operations at steps S505, S508 areexecutable in response to input of “FF” command for example. Analternative approach to obtaining similar results is to employ a schemefor deactivating the power supply and thereafter again activating thepower to thereby perform automatic reading within the chip upondetection of such re-powerup.

Referring next to FIG. 17, there is shown a detailed flow of theoperations at the data write steps S504, S507 in FIG. 16. The routineshown herein starts with step S601 which initializes an address “n”within a cell block (i.e. row address for execution of wordlineselection) and then select even-numbered pages (i.e. even-numbered bitlines BLE). The routine goes next to step S602 which permits inputtingof a command for access to ini data block. And, through a series ofoperations at step S603 for input of “80” and at step S604 foraddress/data entry plus at step S605 for input of “10”, writing is doneto the even page as selected by a single word line.

The data writing here is due to repeated execution of a write pulsevoltage applying operation and a verify-read operation, as in ordinarydata writing. Additionally the initial setup data may be multiple setsof complementary data determinable by a column address as discussedpreviously. If writing is in fail then let the write operation be endedwith “Fail.” If successful completion of writing is verified, then go tostep S606 which determines whether the address “n” is less than “15” incase a single cell block consists of sixteen (16) pages (n=0, 1, 2, . .. , 15). If YES at step S606 then go to step S607 which updates theaddress “n” to “n+1,” followed by a similar write operation relative tothe next page (i.e. next word line). Thereafter a similar operation willbe repeated. As previously stated in conjunction with FIG. 9, theinitial setup data is such that 1-bit data is obtainable in the eventthat all the sixteen binary bits are at “0” or all such bits are “1”;thus, the same data will be written again and again during this writeoperation.

If NO at step S606, then the routine goes to step S608 which sets “Pass”to the even page writing. Then at step S609, perform odd-page selectionfor again initializing the address “n”. And, through a series ofoperations at step S610 for input of an access command of the ini datablock, at step S611 for input of “180”, at step S612 for address/dataentry and at step S613 for input of “10”, writing is done to the oddpage as selected by a single word line.

If writing is failed then let the write operation be interrupted with“Fail”. If sufficient writing was done completely, then go to step S614which determines whether the address “n” stays less than “15”. If YESthen go to step S615 which updates address “n” to “n+1”, followed by asimilar write operation relative to the next page (i.e. next word line).A similar operation will be repeated thereafter causing the same data tobe written into all available pages within the block as selected bysixteen word lines.

An explanation will next be given of the case where the memory chipperforms auto-test. In this case, the autotest is for determination ofwhether each ini data block is normal or not. If a defective block isfound, then set a flag indicating that such is defective within the rowdecoder while letting this block be in non-select or “unselect” state.Consequently, in case certain ini data block of the chip is defective,no writing is applied thereto even upon inputting of an initial setupdata write command; the ini data wiring is done only when such blockstays normal.

An operation flow of the autotest-assisted ini data block wiring isshown in FIG. 18. This operation starts with step S701 which isresponsive to input of an erase command to the memory chip-due totesting, for executing all-at-a-time erase of the first ini data block3A. Then at step S702, let the second ini data block 3B be subject toall-at-once erasing.

Then at step S703, input a command for writing to the first ini datablock 3A and then perform writing thereinto. Next at step S704, input acommand for writing to the second in data block 3B and then performwriting thereinto. As previously stated, writing is done only todefect-free or “normal” one of these data blocks 3A, 3B.

Next at step S705, perform verify-reading of once-written data. If writecompletion is verified successfully then exit the routine while lettingthe chip state be “Pass”. If writing is failed then exit it with “Fail”.This verify-read operation at step S705 is executable in response toinput of the “FF” command for example. An alternative approach is toemploy the scheme for deactivating the power supply and thereafterreactivating the power to thereby perform reading automatically withinthe chip upon detection of such repowerup.

A detailed flow of the write operations at steps S703 and S704 of FIG.18 is shown in FIG. 19. First, at step S801, initialize the address “n”within a NAND cell block (row address for wordline selection); thenselect even pages (i.e. even-numbered bit lines BLE). Then at step S802,input an ini data block access command. Next, input “80” at step S803;input a block address of first ini data block 3A at step S804;thereafter, input a data load command for internal data transfer at stepS805. More specifically, the data to be written (defective columnaddress data) has already been written into the defect address register13 through auto-test procedure; thus, read it for internal transfertoward the data sense circuit 5 stated supra.

And at step S806, perform writing due to inputting of “10”; then,writing is done to the even pages as selected by a single word line. Thedata writing is due to repeated execution of a write pulse voltageapplying operation and a verify-read operation, as in ordinary datawriting. In addition, the initial setup data may be multiple sets ofcomplementary data determinable by a column address as describedpreviously. If writing is failed then let the write operation be endedwith “Fail”.

If successful completion of writing is verified, then go to step S807which determines whether the address “n” is less than “15” in case onecell block consists of 16 wordlines (n=0, 1, 2, . . . , 15). If YES thengo to step S808 which updates the address “n”, followed by a similarwrite operation relative to the next word line. Thereafter a similaroperation will be repeated. As previously explained in conjunction withFIG. 9, the initial setup data is such that 1-bit data is obtainable inthe event that all the 16 bits are at “0” or all such bits are “1”;thus, the same data will be written iteratively during this writeoperation.

At step S809, if the even-pages wiring becomes “Pass” then go to stepS810 which again initializes the address “n” and then performs odd-pagesselection. Then at step S811, input an ini data block access command; atstep S812, input “80”; at step S813, input a block address of second inidata block 3B; then, at step S814, input a data load command forexecution of internal data transfer. In view of the fact that the databeing written (defective row address data and other option data) havealready been written through the test into the defective block's latchcircuit 42, defect address register 13, voltage setup register 15 orelse, read these data items for internal transfer to the sense amplifiercircuit 5.

And, in responding to input of “10” at step S815, writing is donecausing the odd-pages as selected by a single word line to undergowriting. If such writing is failed then interrupt the write operationwith “Fail”. If successful completion of writing is verified, then go tostep S816 which determines whether the address “n” is less than “15”. IfYES then proceed to step S817 which updates address “n”; next, performsimilar writing with respect to the next wordline. Through repeatedexecution of similar operations, the same data will be finally writteninto all cells available within the block as selected by sixteenwordlines.

While the invention has been described with reference to the specificembodiments, the description is illustrative of the invention and is notto be construed as limiting the invention. Although the illustrativeembodiment is for use as the NAND type EEPROM chip, the principles ofthis invention may also be applicable to other types of semiconductormemory devices including, but not limited to, EEPROMs of the NOR type,AND type and DINOR type as well as EPROMs and mask ROMs employingnonvolatile data storable memory cells without electricallyrewitabilities.

As apparent from the foregoing, in accordance with this invention, it ispossible to obtain an improved nonvolatile semiconductor memory devicecapable of successfully achieving initialization of operatingconditions, such as defect address replacement, through writing ofinitial setup data such as defect addresses or the like within thememory cell array thereof, without employing any extra fuse circuitry.

1. A non-volatile semiconductor memory comprising: a memory cell arrayhaving a plurality of non-volatile memory cells, a plurality of saidmemory cells being connected in series to form a NAND cell unit; adecode circuit configured to decode address data and to select a memorycell of said memory cell array; and a data sense circuit configured tosense and amplify data of the selected memory cell of said memory cellarray, wherein initialization of operating conditions are performedbased on data stored in part of the memory cell array upon power beingon, and 1-bit data of said data stored is stored by writing “1” to allof the memory cells in one of said NAND cell unit, or “0” to all of thememory cells in one of said NAND cell unit.
 2. The non-volatilesemiconductor memory according to claim 1, wherein said initializationis performed by reading initial set up data stored in a part of thememory cell array.
 3. The non-volatile semiconductor memory according toclaim 1, wherein said data includes data relating to defective addressdata.
 4. The non-volatile semiconductor memory according to claim 3,wherein as for defective columns corresponding to said defective addressdata, control is done to inactivate said data sense circuit of saiddefective columns.
 5. The non-volatile semiconductor memory according toclaim 1, wherein said data includes data relating to storage capacity ofsaid memory cell array.
 6. The non-volatile semiconductor memoryaccording to claim 1, wherein said data is complementary data.
 7. Thenon-volatile semiconductor memory according to claim 1, wherein saidmemory cell array includes an initial setup data region for holding saiddata.
 8. The non-volatile semiconductor memory according to claim 7,further comprising a register configured to store therein said data asread out of said initial setup data region.
 9. The non-volatilesemiconductor memory according to claim 8, further comprising a controlcircuit configured to read data from said initial setup data region andtransfer the data to said register.
 10. A non-volatile semiconductormemory comprising: a memory cell array having a plurality ofnon-volatile memory cells, a plurality of said memory cells beingconnected in series to form a NAND cell unit; a decode circuitconfigured to decode address data and to select a memory cell of saidmemory cell array; and a data sense circuit configured to sense andamplify data of the selected memory cell of said memory cell array,wherein initialization of operating conditions are performed based ondata stored in a part of the memory cell array upon a conmiand beingprovided, and 1-bit data of said data stored is stored by writing “1” toall of the memory cells in one of said NAND cell unit, or “0” to all ofthe memory cells in one of said NAND cell unit.
 11. The non-volatilesemiconductor memory according to claim 10, wherein said initializationis performed by reading initial set up data stored in a part of thememory cell array.
 12. The non-volatile semiconductor memory accordingto claim 10, wherein said data includes data of defective address data.13. The non-volatile semiconductor memory according to claim 12, whereinas for defective columns corresponding to said defective address data,control is done to inactivate said data sense circuit of said defectivecolumns.
 14. The non-volatile semiconductor memory according to claim 10wherein said data includes data relating to storage capacity of saidmemory cell array.
 15. The non-volatile semiconductor memory accordingto claim 10, wherein said memory cell array is NAND type EEPROM.
 16. Thenon-volatile semiconductor memory according to claim 10, wherein saidmemory cell array includes an initial setup data region for holding saiddata.
 17. The non-volatile semiconductor memory according to claim 16,further comprising a register configured to store therein said data asread out of said initial setup data region.
 18. The non-volatilesemiconductor memory according to claim 17, further comprising a controlcircuit configured to read data from said initial setup data region andtransfer the data to said register.